2N3439P
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- Mfr.Part #
- 2N3439P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 10,609
- In Stock ：
- 10,609
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Current - Collector Cutoff (Max) :
- 20μA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Power - Max :
- 1W
- Transistor Type :
- NPN
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 350V
- JESD-609 Code :
- e3
- Frequency - Transition :
- 15MHz
- Factory Lead Time :
- 20 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Datasheets
- 2N3439P
NPN -65°C~200°C TJ 20μA ICBO TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N3439 PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.This device displays a 350V maximum voltage - Collector Emitter Breakdown.
2N3439 PBFREE Features
the DC current gain for this device is 30 @ 2mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
2N3439 PBFREE Applications
There are a lot of Central Semiconductor Corp
2N3439 PBFREE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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