2N3439L
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- Mfr.Part #
- 2N3439L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A TO5
- Stock
- 33,685
- In Stock ：
- 33,685
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Polarity/Channel Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Factory Lead Time :
- 23 Weeks
- Current - Collector Cutoff (Max) :
- 2µA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Terminal Finish :
- TIN LEAD
- Collector Emitter Voltage (VCEO) :
- 500mV
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 800mW
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 450V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Published :
- 2007
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 800mW
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 350V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- 2N3439L
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N3439L Overview
This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 4mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 1A volts is possible.
2N3439L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
2N3439L Applications
There are a lot of Microsemi Corporation
2N3439L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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