2N3417_D89Z
- Mfr.Part #
- 2N3417_D89Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO92-3
- Stock
- 1,614
- In Stock :
- 1,614
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 500mA
- Power - Max :
- 625mW
- Base Part Number :
- 2N3417
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 4.5V
- Datasheets
- 2N3417_D89Z

NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3417_D89Z Overview
This device has a DC current gain of 180 @ 2mA 4.5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 3mA, 50mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
2N3417_D89Z Features
the DC current gain for this device is 180 @ 2mA 4.5V
the vce saturation(Max) is 300mV @ 3mA, 50mA
2N3417_D89Z Applications
There are a lot of ON Semiconductor
2N3417_D89Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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