2N3417

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

300mV

JESD-609 Code :

e0

RoHS Status :

RoHS Compliant

Terminal Position :

BOTTOM

Published :

2012

Power Dissipation-Max :

625mW

Min Operating Temperature :

-65°C

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Collector Base Voltage (VCBO) :

50V

Additional Feature :

LOW NOISE

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA, 4.5V

Number of Terminations :

3

Packaging :

Bulk

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA (ICBO)

Series :

--

HTS Code :

8541.21.00.95

Polarity :

NPN

DC Current Gain-Min (hFE) :

180

Pin Count :

3

Frequency - Transition :

--

Operating Temperature :

-65°C ~ 150°C (TJ)

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Voltage - Collector Emitter Breakdown (Max) :

50V

Package / Case :

TO-92

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

5V

JESD-30 Code :

O-PBCY-T3

Pbfree Code :

No

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

--

hFE Min :

180

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector Emitter Voltage (VCEO) :

5V

Supplier Device Package :

TO-92

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100nA

Element Configuration :

Single

Continuous Collector Current :

450mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole