2N2896
- Mfr.Part #
- 2N2896
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 90V 1A TO18
- Stock
- 3,419
- In Stock :
- 3,419
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Transistor Type :
- NPN
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 3
- Current - Collector (Ic) (Max) :
- 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 90V
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Supplier Device Package :
- TO-18
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 150mA 10V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Power - Max :
- 1.8W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 15mA, 150mA
- Frequency - Transition :
- 120MHz
- RoHS Status :
- RoHS Compliant
- Datasheets
- 2N2896

NPN 10nA ICBO TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2896 Overview
In this device, the DC current gain is 60 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 15mA, 150mA.Supplier device package TO-18 comes with the product.The device exhibits a collector-emitter breakdown at 90V.
2N2896 Features
the DC current gain for this device is 60 @ 150mA 10V
the vce saturation(Max) is 600mV @ 15mA, 150mA
the supplier device package of TO-18
2N2896 Applications
There are a lot of Microsemi Corporation
2N2896 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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