2N2657
- Mfr.Part #
- 2N2657
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 21,077
- In Stock :
- 21,077
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Reach Compliance Code :
- Unknown
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Brand :
- Microchip Technology
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-609 Code :
- e0
- Frequency - Transition :
- -
- Terminal Form :
- Wire
- Manufacturer :
- Microchip
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Technology :
- Si
- Collector-Emitter Voltage-Max :
- 60 V
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- -
- Terminal Position :
- BOTTOM
- Transistor Polarity :
- NPN
- Number of Terminals :
- 3
- Configuration :
- Single
- Package Shape :
- Round
- Number of Elements :
- 1
- Power - Max :
- 7 W
- Product Category :
- Bipolar Transistors - BJT
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Subcategory :
- Transistors
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- NPN
- Collector Current-Max (IC) :
- 5 A
- Package :
- Bulk
- JESD-30 Code :
- O-MBCY-W3
- Series :
- -
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100µA, 1mA
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 5 A
- Supplier Device Package :
- TO-5AA
- Datasheets
- 2N2657
NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-205AA, TO-5-3 Metal Can Through Hole
2N2657 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is -.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100μA, 1mA.The product comes in the supplier device package of TO-5AA.There is a setting of 60 V for maximal collector-Emitter voltage.A 60 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N2657 Features
the DC current gain for this device is -
the vce saturation(Max) is 500mV @ 100μA, 1mA
the supplier device package of TO-5AA
2N2657 Applications
There are a lot of Microchip Technology
2N2657 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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