2N2605

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Mfr.Part #
2N2605
Manufacturer
Microchip Technology
Package / Case
TO-206AB, TO-46-3 Metal Can
Datasheet
Download
Description
TRANS PNP 60V 0.03A TO46-3
Stock
27,640
In Stock :
27,640

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
10nA
Factory Lead Time :
12 Weeks
Max Power Dissipation :
400mW
Number of Pins :
3
Power Dissipation :
400mW
Supplier Device Package :
TO-46-3
Mounting Type :
Through Hole
Polarity :
PNP
Mount :
Through Hole
RoHS Status :
Non-RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500μA, 10mA
Collector Emitter Voltage (VCEO) :
60V
Packaging :
Bulk
Max Operating Temperature :
200°C
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 5V
Transistor Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~200°C TJ
Collector Emitter Breakdown Voltage :
60V
Max Collector Current :
30mA
Emitter Base Voltage (VEBO) :
6V
Min Operating Temperature :
-65°C
Package / Case :
TO-206AB, TO-46-3 Metal Can
Voltage - Collector Emitter Breakdown (Max) :
60V
Number of Elements :
1
Current - Collector (Ic) (Max) :
30mA
Power - Max :
400mW
Collector Base Voltage (VCBO) :
70V
Radiation Hardening :
No
Published :
2010
Datasheets
2N2605
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N2605 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-206AB, TO-46-3 Metal Can, 2N2605 pinout, 2N2605 datasheet PDF, 2N2605 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N2605 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N2605


PNP -65°C~200°C TJ 10nA 1 Elements TO-206AB, TO-46-3 Metal Can Bulk Through Hole

2N2605 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 500μA, 10mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-46-3.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 30mA volts at its maximum.

2N2605 Features


the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the supplier device package of TO-46-3


2N2605 Applications


There are a lot of Microsemi Corporation
2N2605 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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