2N2605
- Mfr.Part #
- 2N2605
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.03A TO46-3
- Stock
- 27,640
- In Stock :
- 27,640
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA
- Factory Lead Time :
- 12 Weeks
- Max Power Dissipation :
- 400mW
- Number of Pins :
- 3
- Power Dissipation :
- 400mW
- Supplier Device Package :
- TO-46-3
- Mounting Type :
- Through Hole
- Polarity :
- PNP
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Packaging :
- Bulk
- Max Operating Temperature :
- 200°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 30mA
- Emitter Base Voltage (VEBO) :
- 6V
- Min Operating Temperature :
- -65°C
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 30mA
- Power - Max :
- 400mW
- Collector Base Voltage (VCBO) :
- 70V
- Radiation Hardening :
- No
- Published :
- 2010
- Datasheets
- 2N2605
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PNP -65°C~200°C TJ 10nA 1 Elements TO-206AB, TO-46-3 Metal Can Bulk Through Hole
2N2605 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 500μA, 10mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-46-3.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 30mA volts at its maximum.
2N2605 Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the supplier device package of TO-46-3
2N2605 Applications
There are a lot of Microsemi Corporation
2N2605 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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