ZTX657STOA
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- Mfr.Part #
- ZTX657STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A E-LINE
- Stock
- 23,248
- In Stock ：
- 23,248
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.41mm
- Length :
- 4.77mm
- Height :
- 4.01mm
- Reach Compliance Code :
- Unknown
- Max Collector Current :
- 500mA
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Wire
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 500mV
- Base Part Number :
- ZTX657
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8541.29.00.95
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 300V
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~200°C TJ
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- E-Line-3, Formed Leads
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 30MHz
- Continuous Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Published :
- 2012
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Weight :
- 453.59237mg
- Transition Frequency :
- 30MHz
- Terminal Finish :
- MATTE TIN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-30 Code :
- R-PSIP-W3
- Collector Base Voltage (VCBO) :
- 300V
- Voltage - Rated DC :
- 300V
- Datasheets
- ZTX657STOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX657STOA Overview
DC current gain in this device equals 50 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 30MHz.In extreme cases, the collector current can be as low as 500mA volts.
ZTX657STOA Features
the DC current gain for this device is 50 @ 100mA 5V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz
ZTX657STOA Applications
There are a lot of Diodes Incorporated
ZTX657STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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