ZTX601

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

1.1V

Voltage - Rated DC :

160V

Mounting Type :

Through Hole

Length :

4.77mm

Collector Base Voltage (VCBO) :

180V

Number of Terminations :

3

Packaging :

Bulk

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 10mA, 1A

Max Power Dissipation :

1W

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~200°C TJ

Collector Emitter Voltage (VCEO) :

160V

Lead Free :

Lead Free

Transition Frequency :

250MHz

Terminal Form :

Wire

Pbfree Code :

yes

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA 10V

Weight :

453.59237mg

Base Part Number :

ZTX601

Width :

2.41mm

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

10V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

250MHz

Element Configuration :

Single

Package / Case :

E-Line-3

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

160V

Published :

2006

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

NPN - Darlington

RoHS Status :

ROHS3 Compliant

Height :

4.01mm

Polarity :

NPN

Max Collector Current :

1A

Continuous Collector Current :

1A

Mount :

Through Hole

Number of Pins :

3

ECCN Code :

EAR99

Number of Elements :

1

Current - Collector Cutoff (Max) :

10μA

REACH SVHC :

No SVHC

Current Rating :

1A