ZTX449
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- Mfr.Part #
- ZTX449
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A E-LINE
- Stock
- 33,087
- In Stock ：
- 33,087
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Wire
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Package / Case :
- E-Line-3
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 1A
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Published :
- 2006
- Width :
- 2.41mm
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1V
- Voltage - Rated DC :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Power Dissipation :
- 1W
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Frequency :
- 150MHz
- Gain Bandwidth Product :
- 150MHz
- Current Rating :
- 1A
- Length :
- 4.77mm
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 453.59237mg
- Height :
- 4.01mm
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e3
- Packaging :
- Bulk
- Mount :
- Through Hole
- Datasheets
- ZTX449
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX449 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 200mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX449 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX449 Applications
There are a lot of Diodes Incorporated
ZTX449 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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