ZTX415
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- Mfr.Part #
- ZTX415
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A E-LINE
- Stock
- 9,030
- In Stock ：
- 9,030
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~200°C TJ
- Length :
- 4.77mm
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 40MHz
- Voltage - Rated DC :
- 100V
- Published :
- 2006
- Height :
- 4.01mm
- Weight :
- 453.59237mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Reference Standard :
- CECC
- Transistor Type :
- NPN - Avalanche Mode
- Polarity :
- NPN
- Transition Frequency :
- 40MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 15 Weeks
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 680mW
- Current Rating :
- 500mA
- Collector Emitter Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 10mA 10V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Package / Case :
- E-Line-3
- Collector Base Voltage (VCBO) :
- 260V
- Frequency :
- 40MHz
- Width :
- 2.41mm
- Terminal Form :
- Wire
- Collector Emitter Saturation Voltage :
- 500mV
- Power Dissipation :
- 680mW
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 500mA
- Base Part Number :
- ZTX415
- Datasheets
- ZTX415
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NPN - Avalanche Mode -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON E-Line-3 Bulk Through Hole
ZTX415 Overview
In this device, the DC current gain is 25 @ 10mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 1mA, 10mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
ZTX415 Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
ZTX415 Applications
There are a lot of Diodes Incorporated
ZTX415 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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