ZHB6792TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

5V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

70V

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 2A

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Max Collector Current :

1A

Power - Max :

1.25W

Operating Temperature :

-55°C~150°C TJ

Width :

3.7mm

Transistor Application :

SWITCHING

Max Breakdown Voltage :

70V

Factory Lead Time :

15 Weeks

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Frequency :

150MHz

Collector Base Voltage (VCBO) :

70V

Polarity :

NPN, PNP

Length :

6.7mm

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

2W

Current Rating :

1A

Pbfree Code :

No

Packaging :

Cut Tape (CT)

Transition Frequency :

150MHz

Number of Pins :

8

Number of Elements :

4

Frequency - Transition :

100MHz

Collector Emitter Saturation Voltage :

-500mV

Continuous Collector Current :

1A

Mount :

Surface Mount

Power Dissipation :

2W

Package / Case :

8-SMD, Gull Wing

Lead Free :

Lead Free

Published :

2012

Mounting Type :

Surface Mount

Radiation Hardening :

No

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Transistor Type :

2 NPN, 2 PNP (H-Bridge)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 2V

Number of Terminations :

8

Base Part Number :

ZHB6792

Collector Emitter Breakdown Voltage :

70V

Height :

1.6mm

Gain Bandwidth Product :

150MHz

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)