ZHB6790TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

40V

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Number of Terminations :

8

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Current Rating :

2A

Width :

3.7mm

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

2A

Power Dissipation :

2W

Radiation Hardening :

No

Frequency :

150MHz

Max Power Dissipation :

2W

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Power - Max :

1.25W

REACH SVHC :

No SVHC

Number of Pins :

8

Transistor Type :

2 NPN, 2 PNP (H-Bridge)

Factory Lead Time :

15 Weeks

Collector Emitter Voltage (VCEO) :

40V

Max Breakdown Voltage :

40V

Mounting Type :

Surface Mount

Height :

1.6mm

Polarity :

NPN, PNP

Base Part Number :

ZHB6790

ECCN Code :

EAR99

Pin Count :

8

Configuration :

COMPLEX

Published :

2006

Length :

6.7mm

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

8-SMD, Gull Wing

Transition Frequency :

100MHz

Collector Emitter Saturation Voltage :

-750mV

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Elements :

4

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

100MHz

Gain Bandwidth Product :

150MHz