ZDT751TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Base Voltage (VCBO) :

80V

Width :

3.7mm

Length :

6.7mm

Base Part Number :

ZDT751

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

8-SMD, Gull Wing

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Height :

1.6mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Current Rating :

-2A

Factory Lead Time :

15 Weeks

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

60V

Emitter Base Voltage (VEBO) :

-5V

Transition Frequency :

140MHz

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

2.75W

Number of Elements :

2

Published :

1997

Max Power Dissipation :

2.75W

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-280mV

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Frequency :

140MHz

Max Collector Current :

2A

Number of Terminations :

8

Number of Pins :

8

Pbfree Code :

No

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Continuous Collector Current :

-2A

Pin Count :

3

Lead Free :

Lead Free

Gain Bandwidth Product :

140MHz

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Polarity :

PNP

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

2 PNP (Dual)

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

60V

Max Breakdown Voltage :

60V

Voltage - Rated DC :

-60V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)