ZDT749TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

25V

Gain Bandwidth Product :

160MHz

Continuous Collector Current :

-2A

Collector Emitter Voltage (VCEO) :

25V

Length :

6.7mm

Max Collector Current :

2A

Radiation Hardening :

No

Max Breakdown Voltage :

25V

Number of Pins :

8

Power Dissipation :

2.75W

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 2V

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Frequency :

160MHz

Collector Emitter Saturation Voltage :

-230mV

Factory Lead Time :

16 Weeks

Transistor Application :

SWITCHING

Width :

3.7mm

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

2 PNP (Dual)

Collector Base Voltage (VCBO) :

35V

ECCN Code :

EAR99

Transition Frequency :

160MHz

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

2.75W

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2000

Pin Count :

8

Emitter Base Voltage (VEBO) :

-5V

Package / Case :

8-SMD, Gull Wing

Mounting Type :

Surface Mount

Voltage - Rated DC :

-25V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Current Rating :

-6A

Transistor Element Material :

SILICON

Number of Elements :

2

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Pbfree Code :

No

Height :

1.6mm

Base Part Number :

ZDT749

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual