UMZ1N

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Gull wing

Max Collector Current :

150mA

Continuous Collector Current :

-150mA

Height :

900μm

Mounting Type :

Surface Mount

hFE Min :

120

Package / Case :

6-TSSOP, SC-88, SOT-363

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

60V

Mount :

Surface Mount

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Element Configuration :

Dual

HTS Code :

8541.21.00.75

Max Power Dissipation :

150mW

Factory Lead Time :

13 Weeks

Width :

1.25mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Length :

2mm

Polarity :

PNP, NPN

Collector Emitter Voltage (VCEO) :

50V

Published :

2000

Number of Terminations :

6

REACH SVHC :

No SVHC

Transistor Type :

NPN, PNP

Transition Frequency :

180MHz

JESD-609 Code :

e2

Collector Emitter Breakdown Voltage :

50V

Frequency - Transition :

180MHz 140MHz

Lead Free :

Lead Free

Number of Pins :

6

Terminal Finish :

Tin/Copper (Sn/Cu)

Gain Bandwidth Product :

180MHz

Number of Elements :

2

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

*MZ1

Current Rating :

150mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

VCEsat-Max :

0.4 V

Pin Count :

6

Transistor Element Material :

SILICON

Type :

GENERAL PURPOSE

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

-6V

Power Dissipation :

150mW