UMT2NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Terminations :

6

Terminal Finish :

Tin/Copper (Sn/Cu)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Published :

2004

ECCN Code :

EAR99

Height :

900μm

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Max Power Dissipation :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Transistor Type :

2 PNP (Dual)

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

hFE Min :

120

Base Part Number :

MT2

Length :

2mm

JESD-609 Code :

e2

Max Collector Current :

150mA

Collector Emitter Saturation Voltage :

-500mV

Time@Peak Reflow Temperature-Max (s) :

10

Radiation Hardening :

No

Element Configuration :

Dual

Number of Pins :

6

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

50V

Current Rating :

-150mA

Transistor Application :

AMPLIFIER

Width :

1.25mm

Package / Case :

6-TSSOP, SC-88, SOT-363

Transition Frequency :

140MHz

Pin Count :

6

Emitter Base Voltage (VEBO) :

-6V

Transistor Element Material :

SILICON

Voltage - Rated DC :

-50V

REACH SVHC :

No SVHC

VCEsat-Max :

0.5 V

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

-150mA

Max Frequency :

100MHz

HTS Code :

8541.21.00.75

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

60V

Gain Bandwidth Product :

140MHz

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V