UMT2222AT106
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- Mfr.Part #
- UMT2222AT106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A UMT3
- Stock
- 8,669
- In Stock ：
- 8,669
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 75V
- Collector-Base Capacitance-Max :
- 7pF
- Max Breakdown Voltage :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current Rating :
- 600mA
- Package / Case :
- SC-70, SOT-323
- Max Power Dissipation :
- 200mW
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- HTS Code :
- 8541.21.00.75
- Published :
- 2006
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 40V
- hFE Min :
- 35
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Contact Plating :
- Copper, Silver, Tin
- Turn Off Time-Max (toff) :
- 285ns
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 13 Weeks
- Continuous Collector Current :
- 600mA
- Voltage - Rated DC :
- 40V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Max Collector Current :
- 600mA
- Gain Bandwidth Product :
- 300MHz
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Mount :
- Surface Mount
- Transition Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 1V
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Base Part Number :
- T2222A
- Terminal Finish :
- TIN SILVER COPPER
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Datasheets
- UMT2222AT106
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
UMT2222AT106 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 600mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
UMT2222AT106 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
UMT2222AT106 Applications
There are a lot of ROHM Semiconductor
UMT2222AT106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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