UMB11NFHATN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

-50V

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Transistor Type :

2 PNP - Pre-Biased (Dual)

Frequency - Transition :

250MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2016

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Polarity :

PNP

ECCN Code :

EAR99

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

6-VSSOP, SC-88, SOT-363

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Resistor - Base (R1) :

10k Ω

Transition Frequency :

250MHz

Current - Collector (Ic) (Max) :

100mA

Reach Compliance Code :

not_compliant

Series :

Automotive, AEC-Q101

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Transistor Application :

SWITCHING

Voltage - Collector Emitter Breakdown (Max) :

50V

Number of Pins :

6

Resistor - Emitter Base (R2) :

10k Ω

Number of Elements :

2

Max Operating Temperature :

150°C

Max Power Dissipation :

150mW

REACH SVHC :

Unknown