TTC012(Q)
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- Mfr.Part #
- TTC012(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 375V 2A PW-MOLD2
- Stock
- 47,008
- In Stock ：
- 47,008
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 18 Weeks
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 800V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Collector Emitter Voltage (VCEO) :
- 375V
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 1.1W
- Packaging :
- Bulk
- Max Power Dissipation :
- 1.1W
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 300mA 5V
- Collector Emitter Breakdown Voltage :
- 375V
- Number of Elements :
- 1
- Published :
- 2011
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 62.5mA, 500mA
- Mounting Type :
- Through Hole
- Datasheets
- TTC012(Q)
NPN 150°C TJ 10μA ICBO 1 Elements TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
TTC012(Q) Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 300mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 2A volts.
TTC012(Q) Features
the DC current gain for this device is 100 @ 300mA 5V
the vce saturation(Max) is 1V @ 62.5mA, 500mA
TTC012(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
TTC012(Q) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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