TTC009,F(J
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- Mfr.Part #
- TTC009,F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO220NIS
- Stock
- 42,397
- In Stock ：
- 42,397
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Published :
- 2010
- Package / Case :
- TO-220-3 Full Pack
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Frequency - Transition :
- 150MHz
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 3A
- Supplier Device Package :
- TO-220NIS
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Power - Max :
- 2W
- Datasheets
- TTC009,F(J
NPN 150°C TJ 100nA ICBO TO-220-3 Full Pack Bulk Through Hole
TTC009,F(J Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.The product comes in the supplier device package of TO-220NIS.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
TTC009,F(J Features
the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-220NIS
TTC009,F(J Applications
There are a lot of Toshiba Semiconductor and Storage
TTC009,F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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