TSM60NB600CP ROG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Digi-Reel®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.6Ohm

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

36 mJ

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

7A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

516pF @ 100V

Power Dissipation-Max :

63W Tc

Pulsed Drain Current-Max (IDM) :

21A

Surface Mount :

yes

Number of Terminations :

2

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Factory Lead Time :

36 Weeks

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE