TSM60N380CZ C0G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.38Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

169 mJ

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 100V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

11A

Power Dissipation-Max :

125W Tc

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Transistor Application :

SWITCHING

Terminal Position :

Single

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

33A

Transistor Element Material :

SILICON