TSM60N1R4CH C5G
- Mfr.Part #
- TSM60N1R4CH C5G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.3A TO251
- Stock
- 45,717
- In Stock :
- 45,717
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 370pF @ 100V
- Drain to Source Voltage (Vdss) :
- 600V
- Rds On (Max) @ Id, Vgs :
- 1.4Ohm @ 2A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 38W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 7.7nC @ 10V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Tc
- Supplier Device Package :
- TO-251 (IPAK)
- Vgs (Max) :
- ±30V
- Datasheets
- TSM60N1R4CH C5G

N-Channel Tube 1.4Ohm @ 2A, 10V ±30V 370pF @ 100V 7.7nC @ 10V 600V TO-251-3 Short Leads, IPak, TO-251AA
TSM60N1R4CH C5G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 370pF @ 100V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
TSM60N1R4CH C5G Features
a 600V drain to source voltage (Vdss)
TSM60N1R4CH C5G Applications
There are a lot of Taiwan Semiconductor Corporation
TSM60N1R4CH C5G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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