TP2535N3-G
- Mfr.Part #
- TP2535N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 350V 86MA TO92-3
- Stock
- 6,756
- In Stock :
- 6,756
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- TP2535
- Transistor Type :
- 1 P-Channel
- Rise Time :
- 10ns
- Current - Continuous Drain (Id) @ 25°C :
- 86mA Tj
- Product :
- MOSFET Small Signal
- Continuous Drain Current (ID) :
- -86mA
- Brand :
- Microchip Technology
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 20 ns
- Drain-Source On-Volt :
- 350(V)
- Length :
- 5.21mm
- Package Type :
- TO-92
- Number of Pins :
- 3
- Continuous Drain Current :
- 0.086(A)
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting :
- Through Hole
- Power Dissipation-Max :
- 740mW Ta
- Width :
- 4.19mm
- Published :
- 2013
- Factory Lead Time :
- 5 Weeks
- Height :
- 5.33mm
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- -350V
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 453.59237mg
- Qualification Status :
- Not Qualified
- Operating Temp Range :
- -55C to 150C
- Configuration :
- Single
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 350V
- Manufacturer :
- Microchip
- Element Configuration :
- Single
- Product Category :
- MOSFET
- FET Feature :
- --
- Pin Count :
- 3
- Product Type :
- MOSFET
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Polarity :
- P-Channel
- Power Dissipation (Max) :
- 740mW (Ta)
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- Type :
- Power MOSFET
- Rad Hardened :
- No
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- Series :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Mount :
- Through Hole
- Power Dissipation :
- 740mW
- Operating Temperature Classification :
- Military
- Polarity :
- P
- Gate-Source Voltage (Max) :
- ±20(V)
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 10 ns
- Terminal Position :
- BOTTOM
- Maximum Operating Temperature :
- + 150 C
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Operating Mode :
- ENHANCEMENT MODE
- Feedback Cap-Max (Crss) :
- 25 pF
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- P-Channel
- Channel Mode :
- Enhancement
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 100mA, 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drain Current-Max (Abs) (ID) :
- 0.086A
- Packaging :
- Bulk
- Resistance :
- 25Ohm
- Supplier Device Package :
- TO-92-3
- Package :
- Bag
- Mounting Type :
- Through Hole
- RoHS :
- Details
- Datasheets
- TP2535N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 25 Ω @ 100mA, 10V ±20V 125pF @ 25V 350V TO-226-3, TO-92-3 (TO-226AA)
TP2535N3-G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 125pF @ 25V.This device has a continuous drain current (ID) of [-86mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-350V, the drain-source breakdown voltage is -350V.A device's drain current is its maximum continuous current, and this device's drain current is 0.086A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 350V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
TP2535N3-G Features
a continuous drain current (ID) of -86mA
a drain-to-source breakdown voltage of -350V voltage
the turn-off delay time is 20 ns
a 350V drain to source voltage (Vdss)
TP2535N3-G Applications
There are a lot of Microchip Technology
TP2535N3-G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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