TP2510N8-G
- Mfr.Part #
- TP2510N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 480MA TO243AA
- Stock
- 17,163
- In Stock :
- 17,163
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 15 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 150 C
- Lead Free :
- Lead Free
- Series :
- -
- FET Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Weight :
- 52.786812mg
- RoHS :
- Details
- Rise Time :
- 15ns
- Factory Lead Time :
- 6 Weeks
- Width :
- 2.6mm
- Product Type :
- MOSFET
- Brand :
- Microchip Technology / Atmel
- Height :
- 1.6mm
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 480mA
- Current - Continuous Drain (Id) @ 25°C :
- 480mA Tj
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 10 ns
- Mounting Style :
- SMD/SMT
- JESD-30 Code :
- R-PSSO-F3
- Radiation Hardening :
- No
- Product :
- MOSFET Small Signal
- Number of Elements :
- 1
- Transistor Polarity :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Drain Current Id :
- 480
- Supplier Device Package :
- TO-243AA (SOT-89)
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 1.6W Ta
- Length :
- 4.6mm
- Published :
- 2001
- Manufacturer :
- Microchip
- Number of Channels :
- 1
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- TP2510
- Product Category :
- MOSFET
- Transistor Type :
- 1 P-Channel
- Pulsed Drain Current-Max (IDM) :
- 2.5A
- Turn-Off Delay Time :
- 20 ns
- Power Dissipation :
- 1.6W
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Channel Type :
- P
- Mounting Type :
- Surface Mount
- Type :
- FET
- FET Feature :
- -
- Qualification :
- -
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 4
- Drain to Source Breakdown Voltage :
- -100V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation (Max) :
- 1.6W (Ta)
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Drain to Source Voltage (Vdss) :
- 100V
- MSL :
- MSL 1 - Unlimited
- Terminal Form :
- Flat
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 750mA, 10V
- Datasheets
- TP2510N8-G

P-Channel Tape & Reel (TR) 3.5 Ω @ 750mA, 10V ±20V 125pF @ 25V 100V TO-243AA
TP2510N8-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 480mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TP2510N8-G Features
a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2.5A.
a 100V drain to source voltage (Vdss)
TP2510N8-G Applications
There are a lot of Microchip Technology
TP2510N8-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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