TP2510N8-G

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Mfr.Part #
TP2510N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 100V 480MA TO243AA
Stock
17,163
In Stock :
17,163

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Fall Time (Typ) :
15 ns
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Channel Mode :
Enhancement
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
Lead Free :
Lead Free
Series :
-
FET Type :
P-Channel
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Weight :
52.786812mg
RoHS :
Details
Rise Time :
15ns
Factory Lead Time :
6 Weeks
Width :
2.6mm
Product Type :
MOSFET
Brand :
Microchip Technology / Atmel
Height :
1.6mm
Mount :
Surface Mount
Continuous Drain Current (ID) :
480mA
Current - Continuous Drain (Id) @ 25°C :
480mA Tj
JESD-609 Code :
e3
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
260
Turn On Delay Time :
10 ns
Mounting Style :
SMD/SMT
JESD-30 Code :
R-PSSO-F3
Radiation Hardening :
No
Product :
MOSFET Small Signal
Number of Elements :
1
Transistor Polarity :
P-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) :
40
Continuous Drain Current Id :
480
Supplier Device Package :
TO-243AA (SOT-89)
Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
1.6W Ta
Length :
4.6mm
Published :
2001
Manufacturer :
Microchip
Number of Channels :
1
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Base Product Number :
TP2510
Product Category :
MOSFET
Transistor Type :
1 P-Channel
Pulsed Drain Current-Max (IDM) :
2.5A
Turn-Off Delay Time :
20 ns
Power Dissipation :
1.6W
Package / Case :
TO-243AA
RoHS Status :
ROHS3 Compliant
Channel Type :
P
Mounting Type :
Surface Mount
Type :
FET
FET Feature :
-
Qualification :
-
Number of Terminations :
3
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
4
Drain to Source Breakdown Voltage :
-100V
Gate to Source Voltage (Vgs) :
20V
Power Dissipation (Max) :
1.6W (Ta)
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Drain to Source Voltage (Vdss) :
100V
MSL :
MSL 1 - Unlimited
Terminal Form :
Flat
Rds On (Max) @ Id, Vgs :
3.5 Ω @ 750mA, 10V
Datasheets
TP2510N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2510N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-243AA, Mounting Type:Surface Mount, Type:FET, Number of Terminations:3, Number of Pins:4, TP2510N8-G pinout, TP2510N8-G datasheet PDF, TP2510N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2510N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2510N8-G


P-Channel Tape & Reel (TR) 3.5 Ω @ 750mA, 10V ±20V 125pF @ 25V 100V TO-243AA

TP2510N8-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 480mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TP2510N8-G Features


a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2.5A.
a 100V drain to source voltage (Vdss)


TP2510N8-G Applications


There are a lot of Microchip Technology
TP2510N8-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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