TP2540N3-G

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Mfr.Part #
TP2540N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 400V 86MA TO92-3
Stock
9,252
In Stock :
9,252

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Transistor Polarity :
P-Channel
Product :
MOSFET Small Signal
RoHS :
Details
Transistor Type :
1 P-Channel
Number of Elements :
1
Manufacturer :
Microchip
Power Dissipation :
740mW
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
RoHS Status :
ROHS3 Compliant
Packaging :
Bulk
Terminal Position :
BOTTOM
Turn On Delay Time :
10 ns
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
400V
Maximum Operating Temperature :
+ 150 C
Number of Channels :
1
FET Feature :
--
Power Dissipation (Max) :
740mW (Ta)
ECCN Code :
EAR99
Length :
5.21mm
Current - Continuous Drain (Id) @ 25°C :
86mA Tj
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Channel Mode :
Enhancement
Base Product Number :
TP2540
Transistor Element Material :
SILICON
Feedback Cap-Max (Crss) :
25 pF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
10 ns
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Rise Time :
10ns
Drain Current-Max (Abs) (ID) :
0.086A
Number of Terminations :
3
Terminal Finish :
Matte Tin (Sn)
Additional Feature :
LOW THRESHOLD
Height :
5.33mm
Gate to Source Voltage (Vgs) :
20V
Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Product Status :
Active
Vgs (Max) :
±20V
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
86mA
Published :
2013
Package :
Bag
Weight :
453.59237mg
Series :
--
Power Dissipation-Max :
740mW Ta
Rds On (Max) @ Id, Vgs :
25 Ω @ 100mA, 10V
Turn-Off Delay Time :
20 ns
Product Type :
MOSFET
Element Configuration :
Single
Brand :
Microchip Technology / Atmel
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
-400V
Radiation Hardening :
No
Supplier Device Package :
TO-92-3
FET Type :
P-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Width :
4.19mm
Product Category :
MOSFET
Type :
FET
Factory Lead Time :
5 Weeks
Mount :
Through Hole
Datasheets
TP2540N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2540N3-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Channels:1, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:FET, TP2540N3-G pinout, TP2540N3-G datasheet PDF, TP2540N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2540N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2540N3-G


P-Channel Bulk 25 Ω @ 100mA, 10V ±20V 125pF @ 25V 400V TO-226-3, TO-92-3 (TO-226AA)

TP2540N3-G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 125pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 86mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-400V. And this device has -400V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.086A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

TP2540N3-G Features


a continuous drain current (ID) of 86mA
a drain-to-source breakdown voltage of -400V voltage
the turn-off delay time is 20 ns
a 400V drain to source voltage (Vdss)


TP2540N3-G Applications


There are a lot of Microchip Technology
TP2540N3-G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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