TIP33C
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- Mfr.Part #
- TIP33C
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 10A TO218
- Stock
- 23,372
- In Stock ：
- 23,372
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 10A
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- 100V
- Transition Frequency :
- 3MHz
- Lead Free :
- Lead Free
- Max Collector Current :
- 10A
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 6.35mm
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 3MHz
- Pin Count :
- 3
- Gain Bandwidth Product :
- 3MHz
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 2.5A, 10A
- Case Connection :
- COLLECTOR
- Packaging :
- Tube
- Length :
- 6.35mm
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3
- Power Dissipation :
- 80W
- hFE Min :
- 40
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 80W
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 700µA
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Width :
- 76.2mm
- JESD-609 Code :
- e3
- Published :
- 2011
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3A 4V
- Number of Terminations :
- 3
- Datasheets
- TIP33C
NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
TIP33CG Overview
This device has a DC current gain of 20 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 4V @ 2.5A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 10A volts is possible.
TIP33CG Features
the DC current gain for this device is 20 @ 3A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz
TIP33CG Applications
There are a lot of ON Semiconductor
TIP33CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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