TIP3055G

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Mfr.Part #
TIP3055G
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN 60V 15A TO247-3
Stock
990
In Stock :
990

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
2 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 4V
Current Rating :
15A
Case Connection :
COLLECTOR
Vce Saturation (Max) @ Ib, Ic :
3V @ 3.3A, 10A
Current - Collector Cutoff (Max) :
700µA
Transistor Application :
SWITCHING
Height :
20.3454mm
Number of Terminations :
3
REACH SVHC :
No SVHC
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
60V
ECCN Code :
EAR99
Transistor Type :
NPN
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
60V
JESD-609 Code :
e3
Voltage - Rated DC :
60V
Mounting Type :
Through Hole
Gain Bandwidth Product :
2.5MHz
Collector Base Voltage (VCBO) :
100V
Time@Peak Reflow Temperature-Max (s) :
40
Polarity/Channel Type :
NPN
Terminal Finish :
Tin (Sn)
Element Configuration :
Single
hFE Min :
20
Package / Case :
TO-247-3
Transition Frequency :
2.5MHz
Max Power Dissipation :
90W
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Pin Count :
3
Number of Pins :
3
Power Dissipation :
90W
Operating Temperature :
-65°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Width :
4.9022mm
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Radiation Hardening :
No
Length :
15.2146mm
Number of Elements :
1
Collector Emitter Saturation Voltage :
1.1V
Published :
1993
Frequency :
2.5MHz
Weight :
4.535924g
Max Collector Current :
15A
Emitter Base Voltage (VEBO) :
7V
Datasheets
TIP3055G
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP3055G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, TIP3055G pinout, TIP3055G datasheet PDF, TIP3055G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP3055G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP3055G


NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole

TIP3055G Overview


This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.In this part, there is a transition frequency of 2.5MHz.The maximum collector current is 15A volts.

TIP3055G Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz


TIP3055G Applications


There are a lot of ON Semiconductor
TIP3055G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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