TIP3055G
- Mfr.Part #
- TIP3055G
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 15A TO247-3
- Stock
- 990
- In Stock :
- 990
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 2.5MHz
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Length :
- 15.2146mm
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1.1V
- Current Rating :
- 15A
- Surface Mount :
- No
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 15A
- Collector Base Voltage (VCBO) :
- 100V
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Published :
- 1993
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 700µA
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 90W
- Operating Temperature :
- -65°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Width :
- 4.9022mm
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 20
- Voltage - Rated DC :
- 60V
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.3A, 10A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Package / Case :
- TO-247-3
- Frequency :
- 2.5MHz
- Transition Frequency :
- 2.5MHz
- Height :
- 20.3454mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Packaging :
- Tube
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 90W
- Datasheets
- TIP3055G

NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
TIP3055G Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.In this part, there is a transition frequency of 2.5MHz.The maximum collector current is 15A volts.
TIP3055G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz
TIP3055G Applications
There are a lot of ON Semiconductor
TIP3055G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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