TIP3055G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

2 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Current Rating :

15A

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.3A, 10A

Current - Collector Cutoff (Max) :

700µA

Transistor Application :

SWITCHING

Height :

20.3454mm

Number of Terminations :

3

REACH SVHC :

No SVHC

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

60V

ECCN Code :

EAR99

Transistor Type :

NPN

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

60V

JESD-609 Code :

e3

Voltage - Rated DC :

60V

Mounting Type :

Through Hole

Gain Bandwidth Product :

2.5MHz

Collector Base Voltage (VCBO) :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

NPN

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

hFE Min :

20

Package / Case :

TO-247-3

Transition Frequency :

2.5MHz

Max Power Dissipation :

90W

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Number of Pins :

3

Power Dissipation :

90W

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Width :

4.9022mm

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Radiation Hardening :

No

Length :

15.2146mm

Number of Elements :

1

Collector Emitter Saturation Voltage :

1.1V

Published :

1993

Frequency :

2.5MHz

Weight :

4.535924g

Max Collector Current :

15A

Emitter Base Voltage (VEBO) :

7V