TIP30C
- Mfr.Part #
- TIP30C
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A TO220
- Stock
- 2,748
- In Stock :
- 2,748
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Packaging :
- Tube
- Current Rating :
- -1A
- Published :
- 2005
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 2W
- Pin Count :
- 3
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Factory Lead Time :
- 8 Weeks
- Width :
- 4.82mm
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 100V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 3MHz
- Current - Collector Cutoff (Max) :
- 300μA
- Base Part Number :
- TIP30
- Surface Mount :
- No
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 700mV
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -100V
- Length :
- 10.28mm
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Height :
- 15.748mm
- Transition Frequency :
- 3MHz
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Contact Plating :
- Tin
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Transistor Application :
- SWITCHING
- hFE Min :
- 40
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 4.535924g
- Datasheets
- TIP30C

PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP30CG Overview
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).3MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
TIP30CG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 3MHz
TIP30CG Applications
There are a lot of ON Semiconductor
TIP30CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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