TIP30C
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- Mfr.Part #
- TIP30C
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A TO220
- Stock
- 2,748
- In Stock ：
- 2,748
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Length :
- 10.28mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -100V
- Packaging :
- Tube
- Max Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- TIP30
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Pin Count :
- 3
- hFE Min :
- 40
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 100V
- Height :
- 15.748mm
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 300μA
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Type :
- PNP
- Current Rating :
- -1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 3MHz
- Transition Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Width :
- 4.82mm
- Published :
- 2005
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 3MHz
- Operating Temperature :
- -65°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Datasheets
- TIP30C
PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP30CG Overview
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).3MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
TIP30CG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 3MHz
TIP30CG Applications
There are a lot of ON Semiconductor
TIP30CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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