TIP2955G
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- Mfr.Part #
- TIP2955G
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 15A TO247-3
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Length :
- 6.35m
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 90W
- Transition Frequency :
- 2.5MHz
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Frequency :
- 2.5MHz
- Height :
- 6.35m
- Packaging :
- Tube
- Case Connection :
- COLLECTOR
- Current Rating :
- -15A
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 7V
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Voltage - Rated DC :
- -60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 2.5MHz
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 700µA
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Published :
- 2003
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- hFE Min :
- 20
- Max Collector Current :
- 15A
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.3A, 10A
- Width :
- 2.54m
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 90W
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- No
- Weight :
- 45.359237kg
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.1V
- Datasheets
- TIP2955G
TIP2955G Documents
PNP -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-247-3 Tube Through Hole
TIP2955G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3.3A, 10A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2.5MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
TIP2955G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.5MHz
TIP2955G Applications
There are a lot of ON Semiconductor
TIP2955G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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