TIP2955G

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Mfr.Part #
TIP2955G
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS PNP 60V 15A TO247-3
Stock
19
In Stock :
19

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
60V
Pin Count :
3
Collector Base Voltage (VCBO) :
100V
JESD-609 Code :
e3
Packaging :
Tube
Radiation Hardening :
No
Factory Lead Time :
2 Weeks
Width :
2.54m
Element Configuration :
Single
Voltage - Rated DC :
-60V
Mounting Type :
Through Hole
Number of Pins :
3
Package / Case :
TO-247-3
Transistor Application :
SWITCHING
Current Rating :
-15A
Polarity/Channel Type :
PNP
Weight :
45.359237kg
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
7V
Collector Emitter Voltage (VCEO) :
60V
Height :
6.35m
Vce Saturation (Max) @ Ib, Ic :
3V @ 3.3A, 10A
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector Cutoff (Max) :
700µA
Gain Bandwidth Product :
2.5MHz
Frequency :
2.5MHz
hFE Min :
20
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Published :
2003
Max Power Dissipation :
90W
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 4V
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Operating Temperature :
-65°C~150°C TJ
Surface Mount :
No
Lifecycle Status :
ACTIVE (Last Updated: 15 hours ago)
Max Collector Current :
15A
Number of Terminations :
3
Pbfree Code :
yes
Transition Frequency :
2.5MHz
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Number of Elements :
1
Peak Reflow Temperature (Cel) :
260
Length :
6.35m
Case Connection :
COLLECTOR
Collector Emitter Saturation Voltage :
1.1V
Power Dissipation :
90W
Datasheets
TIP2955G
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP2955G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, TIP2955G pinout, TIP2955G datasheet PDF, TIP2955G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP2955G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP2955G


PNP -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-247-3 Tube Through Hole

TIP2955G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3.3A, 10A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2.5MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

TIP2955G Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.5MHz


TIP2955G Applications


There are a lot of ON Semiconductor
TIP2955G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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