SUP85N10-10-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape (CT)

Published :

2010

Weight :

6.000006g

Continuous Drain Current (ID) :

85A

Drain to Source Breakdown Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

6550pF @ 25V

Power Dissipation-Max :

3.75W Ta 250W Tc

Rds On Max :

10.5 mΩ

Factory Lead Time :

14 Weeks

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

3

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

10.5mOhm @ 30A, 10V

Input Capacitance :

6.55nF

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Series :

TrenchFET®

Drain to Source Resistance :

10.5mOhm

Min Operating Temperature :

-55°C

Max Operating Temperature :

175°C

Turn On Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Element Configuration :

Single

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

55 ns

Height :

9.01mm

Length :

10.41mm

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

4.7mm