SUP80090E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

128A Tc

Avalanche Energy Rating (Eas) :

180 mJ

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Vgs (Max) :

±20V

Series :

ThunderFET®

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2016

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

150V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

128A

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Pulsed Drain Current-Max (IDM) :

240A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Transistor Element Material :

SILICON

Threshold Voltage :

5V

Drain to Source Voltage (Vdss) :

150V

Drain-source On Resistance-Max :

0.011Ohm

REACH SVHC :

Unknown

Surface Mount :

No

Factory Lead Time :

14 Weeks

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3425pF @ 75V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

375W Tc

Number of Elements :

1

Transistor Application :

SWITCHING