SUP85N10-10-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

130 ns

Turn On Delay Time :

12 ns

Drain to Source Breakdown Voltage :

100V

Series :

TrenchFET®

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Power Dissipation-Max :

3.75W Ta 250W Tc

Threshold Voltage :

3V

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Case Connection :

DRAIN

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Packaging :

Tube

Height :

9.01mm

Avalanche Energy Rating (Eas) :

280 mJ

Input Capacitance (Ciss) (Max) @ Vds :

6550pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Published :

2016

REACH SVHC :

No SVHC

Nominal Vgs :

3 V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Turn-Off Delay Time :

55 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 30A, 10V

Number of Elements :

1

Width :

4.7mm

Factory Lead Time :

14 Weeks

Rise Time :

90ns

Continuous Drain Current (ID) :

85A

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Length :

10.41mm

Weight :

6.000006g

ECCN Code :

EAR99

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

240A

Resistance :

10.5mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pin Count :

3

Power Dissipation :

250W

Transistor Element Material :

SILICON

Number of Pins :

3