SUM85N15-19-E3
- Mfr.Part #
- SUM85N15-19-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 85A TO263
- Stock
- 40,937
- In Stock :
- 40,937
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 2 V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ) :
- 170 ns
- Vgs (Max) :
- ±20V
- Reverse Recovery Time :
- 130 ns
- Termination :
- SMD/SMT
- Resistance :
- 19mOhm
- Power Dissipation :
- 3.75W
- Series :
- TrenchFET®
- JESD-609 Code :
- e3
- Width :
- 9.65mm
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Weight :
- 1.437803g
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 3.75W Ta 375W Tc
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 30A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Published :
- 2009
- Continuous Drain Current (ID) :
- 85A
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- REACH SVHC :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 4750pF @ 25V
- Element Configuration :
- Single
- Length :
- 10.41mm
- Max Junction Temperature (Tj) :
- 175°C
- Height :
- 4.826mm
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 150V
- Threshold Voltage :
- 2V
- Packaging :
- Cut Tape (CT)
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 170ns
- Drain to Source Breakdown Voltage :
- 150V
- Operating Mode :
- ENHANCEMENT MODE
- Voltage :
- 150V
- Factory Lead Time :
- 14 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PSSO-G2
- Turn On Delay Time :
- 22 ns
- Current :
- 85A
- Turn-Off Delay Time :
- 40 ns
- Datasheets
- SUM85N15-19-E3
N-Channel Cut Tape (CT) 19m Ω @ 30A, 10V ±20V 4750pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM85N15-19-E3 Overview
A device's maximal input capacitance is 4750pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 85A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 150V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
SUM85N15-19-E3 Features
a continuous drain current (ID) of 85A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 40 ns
a threshold voltage of 2V
SUM85N15-19-E3 Applications
There are a lot of Vishay Siliconix
SUM85N15-19-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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