SUM85N15-19-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

150V

Reverse Recovery Time :

130 ns

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 25V

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Factory Lead Time :

14 Weeks

Width :

9.65mm

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Power Dissipation :

3.75W

Length :

10.41mm

Height :

4.826mm

Current - Continuous Drain (Id) @ 25°C :

85A Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Continuous Drain Current (ID) :

85A

Drain to Source Breakdown Voltage :

150V

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

19m Ω @ 30A, 10V

Rise Time :

170ns

Current :

85A

Weight :

1.437803g

Terminal Finish :

Matte Tin (Sn) - annealed

Pbfree Code :

yes

Number of Pins :

3

Number of Elements :

1

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)

Vgs (Max) :

±20V

Turn On Delay Time :

22 ns

Fall Time (Typ) :

170 ns

Power Dissipation-Max :

3.75W Ta 375W Tc

REACH SVHC :

Unknown

Number of Terminations :

2

Resistance :

19mOhm

Series :

TrenchFET®

Nominal Vgs :

2 V

FET Type :

N-Channel

Voltage :

150V

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

ECCN Code :

EAR99

Turn-Off Delay Time :

40 ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

175°C

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Published :

2009

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V