SUM80090E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3425pF @ 75V

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2016

Power Dissipation-Max :

375W Tc

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

180 mJ

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

REACH SVHC :

Unknown

Series :

ThunderFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Drain-source On Resistance-Max :

0.0105Ohm

Drain to Source Voltage (Vdss) :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

150V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

128A

Transistor Application :

SWITCHING

Threshold Voltage :

5V

Current - Continuous Drain (Id) @ 25°C :

128A Tc

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

240A

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ