SUM85N03-06P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation :

3.75W

Vgs(th) (Max) @ Id :

3V @ 250µA

Resistance :

6mOhm

Number of Elements :

1

FET Type :

N-Channel

Power Dissipation-Max :

3.75W Ta 100W Tc

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Rise Time :

12ns

Transistor Element Material :

SILICON

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

85A Tc

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Mount :

Surface Mount

Pbfree Code :

yes

Fall Time (Typ) :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Rds On (Max) @ Id, Vgs :

6m Ω @ 20A, 10V

Terminal Form :

Gull wing

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

85A

Element Configuration :

Single

Series :

TrenchFET®

ECCN Code :

EAR99

Turn-Off Delay Time :

30 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Pulsed Drain Current-Max (IDM) :

200A

Published :

2009