SUM85N03-06P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Mounting Type :

Surface Mount

Published :

2009

ECCN Code :

EAR99

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3.75W Ta 100W Tc

FET Type :

N-Channel

Power Dissipation :

3.75W

Turn-Off Delay Time :

30 ns

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Elements :

1

Series :

TrenchFET®

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

6m Ω @ 20A, 10V

Rise Time :

12ns

Resistance :

6mOhm

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

200A

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

85A

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Mount :

Surface Mount

Vgs (Max) :

±20V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

85A Tc

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

12 ns