STY60NM60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Fall Time (Typ) :

76 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±30V

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

55 ns

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Series :

MDmesh™

Number of Elements :

1

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

55m Ω @ 30A, 10V

Package / Case :

TO-247-3

Width :

5.3mm

ECCN Code :

EAR99

Height :

20.3mm

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Voltage - Rated DC :

600V

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

560W Tc

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

240A

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 25V

Number of Pins :

3

Rise Time :

95ns

Drain to Source Breakdown Voltage :

600V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

560W

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

60A

Gate Charge (Qg) (Max) @ Vgs :

266nC @ 10V

Current Rating :

60A

Length :

5.9mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STY60N

Drain-source On Resistance-Max :

0.055Ohm

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

60A Tc

FET Type :

N-Channel

Turn-Off Delay Time :

55 ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No