STY60NK30Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

450W Tc

Rds On (Max) @ Id, Vgs :

45m Ω @ 30A, 10V

Threshold Voltage :

3.75V

Height :

20.3mm

Voltage - Rated DC :

300V

Drain to Source Breakdown Voltage :

300V

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Width :

5.3mm

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Base Part Number :

STY60N

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

700 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

247

REACH SVHC :

No SVHC

Fall Time (Typ) :

60 ns

Current Rating :

60A

JESD-609 Code :

e3

Turn-Off Delay Time :

150 ns

Package / Case :

TO-247-3

Turn On Delay Time :

50 ns

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

60A

Length :

15.9mm

ECCN Code :

EAR99

Rise Time :

90ns

Drain-source On Resistance-Max :

0.045Ohm

Number of Elements :

1

FET Type :

N-Channel

Transistor Application :

SWITCHING

Series :

SuperMESH™

Transistor Element Material :

SILICON

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Power Dissipation :

450W

Pin Count :

3

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

240A

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3