STY60NM50

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mount :

Through Hole

Operating Temperature :

150°C TJ

Resistance :

50mOhm

Power Dissipation :

560W

Drain to Source Breakdown Voltage :

500V

RoHS Status :

ROHS3 Compliant

Series :

MDmesh™

JESD-609 Code :

e3

Current Rating :

60A

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Power Dissipation-Max :

560W Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

240A

Transistor Element Material :

SILICON

Rise Time :

58ns

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

FET Type :

N-Channel

Width :

6.35mm

Pin Count :

3

Element Configuration :

Single

Packaging :

Tube

Fall Time (Typ) :

46 ns

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Continuous Drain Current (ID) :

60A

Weight :

4.535924g

Gate Charge (Qg) (Max) @ Vgs :

266nC @ 10V

Height :

6.35mm

Factory Lead Time :

12 Weeks

Threshold Voltage :

4V

Mounting Type :

Through Hole

Lead Free :

Lead Free

Number of Terminations :

3

Length :

25.4mm

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

51 ns

Base Part Number :

STY60N

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Voltage - Rated DC :

500V

Rds On (Max) @ Id, Vgs :

50m Ω @ 30A, 10V