STW69N65M5

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Mfr.Part #
STW69N65M5
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 650V 58A TO247
Stock
3,535
In Stock :
3,535

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±25V
Turn On Delay Time :
102 ns
Power Dissipation-Max :
330W Tc
Width :
5.15mm
Packaging :
Tube
Number of Elements :
1
ECCN Code :
EAR99
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
58A Tc
Factory Lead Time :
17 Weeks
Resistance :
45mOhm
Gate to Source Voltage (Vgs) :
25V
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Length :
15.75mm
Drain to Source Breakdown Voltage :
650V
Operating Temperature :
150°C TJ
Series :
MDmesh™ V
Turn-Off Delay Time :
102 ns
Base Part Number :
STW69N
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
6420pF @ 100V
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
5V @ 250μA
Radiation Hardening :
No
Package / Case :
TO-247-3
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
143nC @ 10V
Element Configuration :
Single
Height :
20.15mm
Power Dissipation :
330W
Mounting Type :
Through Hole
Threshold Voltage :
4V
Rds On (Max) @ Id, Vgs :
45m Ω @ 29A, 10V
Continuous Drain Current (ID) :
58A
Datasheets
STW69N65M5
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STW69N65M5 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Base Part Number:STW69N, Package / Case:TO-247-3, Mounting Type:Through Hole, STW69N65M5 pinout, STW69N65M5 datasheet PDF, STW69N65M5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STW69N65M5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STW69N65M5


N-Channel Tube 45m Ω @ 29A, 10V ±25V 6420pF @ 100V 143nC @ 10V TO-247-3


STW69N65M5 Description


These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications that require superior power density and outstanding efficiency.



STW69N65M5 Features


Worldwide best RDS(on) * area

Higher VDSS rating and high DV/DT capability

Excellent switching performance

100% avalanche tested



STW69N65M5 Applications


Switching applications


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