STW69N65M5
- Mfr.Part #
- STW69N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 58A TO247
- Stock
- 3,535
- In Stock :
- 3,535
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±25V
- Turn On Delay Time :
- 102 ns
- Power Dissipation-Max :
- 330W Tc
- Width :
- 5.15mm
- Packaging :
- Tube
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Factory Lead Time :
- 17 Weeks
- Resistance :
- 45mOhm
- Gate to Source Voltage (Vgs) :
- 25V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Length :
- 15.75mm
- Drain to Source Breakdown Voltage :
- 650V
- Operating Temperature :
- 150°C TJ
- Series :
- MDmesh™ V
- Turn-Off Delay Time :
- 102 ns
- Base Part Number :
- STW69N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6420pF @ 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Radiation Hardening :
- No
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 143nC @ 10V
- Element Configuration :
- Single
- Height :
- 20.15mm
- Power Dissipation :
- 330W
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 4V
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 29A, 10V
- Continuous Drain Current (ID) :
- 58A
- Datasheets
- STW69N65M5

N-Channel Tube 45m Ω @ 29A, 10V ±25V 6420pF @ 100V 143nC @ 10V TO-247-3
STW69N65M5 Description
These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications that require superior power density and outstanding efficiency.
STW69N65M5 Features
Worldwide best RDS(on) * area
Higher VDSS rating and high DV/DT capability
Excellent switching performance
100% avalanche tested
STW69N65M5 Applications
Switching applications
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