STW60NE10
- Mfr.Part #
- STW60NE10
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO247-3
- Stock
- 4,798
- In Stock :
- 4,798
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 100V
- JESD-609 Code :
- e0
- Power Dissipation-Max :
- 180W Tc
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current (ID) :
- 60A
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 60A
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 5300pF @ 25V
- Drain to Source Breakdown Voltage :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 240A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-247AC
- Number of Terminations :
- 3
- Rise Time :
- 45ns
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 45 ns
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Mount :
- Through Hole
- Power Dissipation :
- 180W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 30A, 10V
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.022Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Lead Free :
- Contains Lead
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 175°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Base Part Number :
- STW60N
- Series :
- STripFET™
- Datasheets
- STW60NE10

N-Channel Tube 22m Ω @ 30A, 10V ±20V 5300pF @ 25V 185nC @ 10V TO-247-3
STW60NE10 Description
The STW60NE10 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STW60NE10 Features
-
Typical RDS(on)=0.016Ω
-
Exceptional dv/dt capability
-
100% Avalanche tested
-
Application-oriented
-
Characterization
STW60NE10 Applications
-
High current, high-speed switching
-
Solenoid and relay drivers
-
DC-DC& DC-AC Converters
-
Automotive environment
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