STW60N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Width :

5.15mm

ECCN Code :

EAR99

Height :

20.15mm

Power Dissipation :

255W

Drain to Source Breakdown Voltage :

650V

Additional Feature :

ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

6810pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

46A

Package / Case :

TO-247-3

Rise Time :

11ns

Vgs (Max) :

±25V

Power Dissipation-Max :

255W Tc

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Resistance :

59mOhm

REACH SVHC :

No SVHC

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Pin Count :

3

Gate to Source Voltage (Vgs) :

25V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Series :

MDmesh™ V

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Base Part Number :

STW60N

Turn On Delay Time :

90 ns

Threshold Voltage :

4V

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Packaging :

Tube

Length :

15.75mm

Fall Time (Typ) :

16 ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

59m Ω @ 23A, 10V

Number of Terminations :

3

Number of Elements :

1

Number of Pins :

3

Turn-Off Delay Time :

13 ns

JESD-609 Code :

e3

Lead Free :

Lead Free