STP7NM50N
- Mfr.Part #
- STP7NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 5A TO220AB
- Stock
- 15,320
- In Stock :
- 15,320
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 20A
- Continuous Drain Current (ID) :
- 5A
- Gate to Source Voltage (Vgs) :
- 25V
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 500V
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Turn-Off Delay Time :
- 40 ns
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- Power Dissipation :
- 45W
- Rise Time :
- 5ns
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.78Ohm
- Power Dissipation-Max :
- 45W Tc
- Series :
- MDmesh™ II
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 50V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 9 ns
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 780m Ω @ 2.5A, 10V
- Vgs (Max) :
- ±25V
- Base Part Number :
- STP7N
- Pin Count :
- 3
- Datasheets
- STP7NM50N

N-Channel Tube 780m Ω @ 2.5A, 10V ±25V 400pF @ 50V 12nC @ 10V TO-220-3
STP7NM50N Overview
A device's maximum input capacitance is 400pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Its maximum pulsed drain current is 20A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP7NM50N Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 20A.
STP7NM50N Applications
There are a lot of STMicroelectronics
STP7NM50N applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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