STP7NB60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

28.8A

Power Dissipation :

125W

Feedback Cap-Max (Crss) :

21 pF

Voltage - Rated DC :

600V

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

125W Tc

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.6A, 10V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Continuous Drain Current (ID) :

7.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

Mount :

Through Hole

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

JESD-609 Code :

e3

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

5 ns

Input Capacitance (Ciss) (Max) @ Vds :

1625pF @ 25V

Pin Count :

3

Rise Time :

8ns

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Current Rating :

7.2A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Qualification Status :

Not Qualified

Turn On Time-Max (ton) :

39ns

Series :

PowerMESH™

Vgs (Max) :

±30V

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

7.2A Tc

Packaging :

Tube

Avalanche Energy Rating (Eas) :

580 mJ

RoHS Status :

Non-RoHS Compliant