STP7N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STP7N

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

13.4nC @ 10V

Turn On Delay Time :

11.3 ns

Pulsed Drain Current-Max (IDM) :

24A

Length :

10.4mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Fall Time (Typ) :

20.2 ns

Power Dissipation-Max :

110W Tc

Height :

15.75mm

Package / Case :

TO-220-3

ECCN Code :

EAR99

Continuous Drain Current (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

88 mJ

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Series :

SuperMESH5™

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Rise Time :

8.3ns

Width :

4.6mm

Number of Terminations :

3

Drain to Source Breakdown Voltage :

800V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 100µA

Power Dissipation :

110W

Element Configuration :

Single

Radiation Hardening :

No

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

6A

Factory Lead Time :

17 Weeks

Turn-Off Delay Time :

23.7 ns

Case Connection :

DRAIN

Lead Free :

Lead Free

Number of Elements :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)