STL75N8LF6
- Mfr.Part #
- STL75N8LF6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 75A POWERFLAT
- Stock
- 23,529
- In Stock :
- 23,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 8
- Rise Time :
- 14ns
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 26 ns
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-PowerVDFN
- Turn On Delay Time :
- 17 ns
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 80W Tc
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 6895pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 72A
- Rds On (Max) @ Id, Vgs :
- 7.4m Ω @ 9A, 10V
- Base Part Number :
- STL75
- Number of Pins :
- 8
- Drain to Source Voltage (Vdss) :
- 80V
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 5
- JESD-30 Code :
- R-PDSO-N5
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 4.5V
- Turn-Off Delay Time :
- 112 ns
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 75A
- Series :
- DeepGATE™, STripFET™ VI
- Vgs (Max) :
- +21V, -16V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 80W
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- ECCN Code :
- EAR99
- Datasheets
- STL75N8LF6

N-Channel Tape & Reel (TR) 7.4m Ω @ 9A, 10V +21V, -16V 6895pF @ 25V 125nC @ 4.5V 80V 8-PowerVDFN
STL75N8LF6 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 670 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6895pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.It is [112 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 72A.A turn-on delay time of 17 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 80V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
STL75N8LF6 Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 75A
the turn-off delay time is 112 ns
based on its rated peak drain current 72A.
a 80V drain to source voltage (Vdss)
STL75N8LF6 Applications
There are a lot of STMicroelectronics
STL75N8LF6 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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