STL70N10F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

64A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3210pF @ 25V

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

136W

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

82A

JESD-30 Code :

R-PDSO-F5

Mounting Type :

Surface Mount

Terminal Position :

Dual

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

43 ns

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Terminations :

5

Series :

STripFET™ III

Transistor Application :

SWITCHING

Power Dissipation-Max :

136W Tc

Case Connection :

DRAIN

Rise Time :

11ns

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Flat

Base Part Number :

STL70

Turn On Delay Time :

17 ns

Package / Case :

8-PowerVDFN

Fall Time (Typ) :

5.7 ns

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 8A, 10V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Avalanche Energy Rating (Eas) :

770 mJ

Packaging :

Cut Tape (CT)