STL45N65M5
- Mfr.Part #
- STL45N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22.5A PWRFLAT
- Stock
- 23,382
- In Stock :
- 23,382
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Height :
- 950μm
- Continuous Drain Current (ID) :
- 22.5A
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Base Part Number :
- STL45
- Number of Pins :
- 4
- Turn-Off Delay Time :
- 79.5 ns
- Rise Time :
- 11ns
- Drain to Source Voltage (Vdss) :
- 650V
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 86m Ω @ 14.5A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Ta 22.5A Tc
- Package / Case :
- 8-PowerVDFN
- Length :
- 8mm
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 2.8W Ta 160W Tc
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±25V
- Series :
- MDmesh™ V
- Factory Lead Time :
- 12 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Fall Time (Typ) :
- 9.3 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3470pF @ 100V
- Gate to Source Voltage (Vgs) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 79.5 ns
- Width :
- 8mm
- Number of Elements :
- 1
- Power Dissipation :
- 2.8W
- Element Configuration :
- Single
- Datasheets
- STL45N65M5
STL45N65M5 Documents

N-Channel Tape & Reel (TR) 86m Ω @ 14.5A, 10V ±25V 3470pF @ 100V 82nC @ 10V 650V 8-PowerVDFN
STL45N65M5 MOSFET Description
The STL45N65M5 is a 650 V, 22.5 A N-Channel MOSFET with very low on-resistance (maximum 0.086 Ω). Its operating and storage temperature is between -55°C and 150°C. The MDmeshTM M5 unique vertical process technology is paired with the well-known PowerMESHTM horizontal architecture to create this N-channel Power MOSFET. The final product has an extremely low on-resistance, making it ideal for applications that require high power and efficiency.
STL45N65M5 MOSFET Features
Extremely low RDS(on) - up to 0.086 Ω
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Voltage rise time: 11 ns
STL45N65M5 MOSFET Applications
Power Converter
Inverter
Switching Applications
High Voltage Applications
PFC Topology
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