STL42N65M5
- Mfr.Part #
- STL42N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 4A PWRFLAT HV
- Stock
- 2,039
- In Stock :
- 2,039
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Pin Count :
- 5
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 79m Ω @ 16.5A, 10V
- Continuous Drain Current (ID) :
- 34A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4650pF @ 100V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Factory Lead Time :
- 12 Weeks
- Avalanche Energy Rating (Eas) :
- 950 mJ
- Power Dissipation-Max :
- 3W Ta 208W Tc
- Series :
- MDmesh™ V
- Operating Temperature :
- 150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Number of Pins :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- 8-PowerVDFN
- Base Part Number :
- STL42
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Gate to Source Voltage (Vgs) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 208W
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta 34A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- 650V
- Packaging :
- Cut Tape (CT)
- Vgs (Max) :
- ±25V
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Resistance :
- 79mOhm
- Datasheets
- STL42N65M5

N-Channel Cut Tape (CT) 79m Ω @ 16.5A, 10V ±25V 4650pF @ 100V 100nC @ 10V 8-PowerVDFN
STL42N65M5 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 950 mJ.A device's maximum input capacitance is 4650pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STL42N65M5 Features
the avalanche energy rating (Eas) is 950 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 650V voltage
STL42N65M5 Applications
There are a lot of STMicroelectronics
STL42N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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